advanced power n-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss 60v lower gate charge r ds(on) 90m fast switching characteristic i d 4.1a rohs compliant & halogen-free description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 45 /w data and specifications subject to change without n otice parameter operating junction temperature range continuous drain current, v gs @ 10v 3 3.2 pulsed drain current 1 10 total power dissipation storage temperature range -55 to 150 thermal data gate-source voltage + 20 continuous drain current, v gs @ 10v 3 4.1 parameter rating drain-source voltage 60 AP2310GK-HF 2.78 -55 to 150 201109091 halogen-free product 1 g d s d d s g sot-223 advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device desi gn, ultra low on-resistance and cost-effectiveness. the sot-223 package is designed for suface mount applicatio n, larger heatsink than so-8 and sot package.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 60 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =2.5a - - 90 m v gs =4.5v, i d =1.5a - - 120 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance 2 v ds =10v, i d =2.5a - 7 - s i dss drain-source leakage current v ds =48v, v gs =0v - - 25 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge i d =2.5a - 6.5 - nc q gs gate-source charge v ds =48v - 1.5 - nc q gd gate-drain ("miller") charge v gs =4.5v - 3.5 - nc t d(on) turn-on delay time v ds =30v - 5 - ns t r rise time i d =1a - 5 - ns t d(off) turn-off delay time r g =3.3 - 17 - ns t f fall time v gs =10v - 4 - ns c iss input capacitance v gs =0v - 500 - pf c oss output capacitance v ds =25v - 55 - pf c rss reverse transfer capacitance f=1.0mhz - 40 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =1a, v gs =0v - - 1.3 v t rr reverse recovery time i s =2a, v gs =0v, - 23 - ns q rr reverse recovery charge di/dt=100a/s - 23 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test this product is sensitive to electrostatic discharg e, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized . apec does not assume any liability arising out of t he application or use of any product or circuit des cribed herein; neither does it convey any license under it s patent rights, nor the rights of others. apec reserves the right to make changes without fur ther notice to any products herein to improve reliability, function or design. AP2310GK-HF 3.surface mounted on 1 in 2 copper pad of fr4 board, t < 10sec ; 120 /w when mounted on min. copper pad. 2
AP2310GK-HF fig 1. typical output characteristics fig 2. typical output characteristics 20 fig 3. on-resistance v.s. gate volta ge fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 2 4 6 8 10 0 1 2 3 4 5 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c 10 v 7.0v 5.0v 4.5v v g =3.0v 0 2 4 6 8 10 0 1 2 3 4 5 v ds , drain-to-source voltage (v) i d , drain current (a) t a =150 o c 10v 7.0v 5.0v 4.5v v g =3.0v 0.6 1.0 1.4 1.8 2.2 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d = 2.5 a v g =10v 75 81 87 93 99 105 2 4 6 8 10 v gs , gate-to-source voltage (v) r ds(on) (m ? ) i d = 1.5 a t a =25 o c 0 1 2 3 0 0.4 0.8 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.0 0.4 0.8 1.2 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) (v)
AP2310GK-HF fig 7. gate charge characteristics fig 8. typical capacitance characteristi cs fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. maximum continuous drain curren t fig 12. gate charge waveform v.s. ambient temperature 4 0 2 4 6 8 10 12 0 4 8 12 16 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =2.5a v ds =48v 10 210 410 610 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss q v g 4.5v q gs q gd q g charge 0.01 0.1 1 10 100 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a r thja = 120 /w t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0 1 2 3 4 5 6 25 50 75 100 125 150 t a , ambient temperature ( o c ) i d , drain current (a) operation in this area limited by r ds(on)
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